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HYMP564S646-E3

Hynix ยท Modules

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Hynix HYMP564S646-E3

Hynix HYMP564S646-E3 overview

SK Hynix Inc HYMP564S646-E3 Dram, Memory Density:4.295 Gbit, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps,...

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Part number or familyHYMP564S646-E3
Product groupModules

Product details

Manufactured byHynix
Product groupModules
DescriptionSK Hynix Inc HYMP564S646-E3 Dram, Memory Density:4.295 Gbit, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionHynix HYMP564S646-E3 DDR2 Memory, HYMP564S646-E3 AVV 512MB 200p PC2-3200 CL3 8c 32x16 DDR2-400 SODIMM T004-RFB Korea, Hynix
DescriptionSK Hynix Inc HYMP564S646-E3 Dram, Memory Density:4.295 Gbit, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST

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