Hynix HY588321QF-10 overview
HY588321QF-10 is a DRAM's made by Hynix. SK Hynix Inc HY588321QF-10 Dram, Memory Density:8.3886 Mbit, Memory Width:32, Organization:256KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:1024, Access Mode:DUAL BANK PAGE BURST
Product details
Manufactured byHynix
Product typeDRAM's
DescriptionSK Hynix Inc HY588321QF-10 Dram, Memory Density:8.3886 Mbit, Memory Width:32, Organization:256KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:1024, Access Mode:DUAL BANK PAGE BURST
DescriptionSK Hynix Inc HY588321QF-10 Dram, Memory Density:8.3886 Mbit, Memory Width:32, Organization:256KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:1024, Access Mode:DUAL BANK PAGE BURST
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