Hynix HY58163211-10F overview
HY58163211-10F is a DRAM's made by Hynix. SK Hynix Inc HY58163211-10F Dram, Memory Density:16.7772 Mbit, Memory Width:32, Organization:512KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048
Product details
Manufactured byHynix
Product typeDRAM's
DescriptionSK Hynix Inc HY58163211-10F Dram, Memory Density:16.7772 Mbit, Memory Width:32, Organization:512KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048
DescriptionSK Hynix Inc HY58163211-10F Dram, Memory Density:16.7772 Mbit, Memory Width:32, Organization:512KX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048
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