Hynix HMT112S6AFR6C-H8 overview
HMT112S6AFR6C-H8 is a DRAM's made by Hynix. SK Hynix Inc HMT112S6AFR6C-H8 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5, 3.3 V, Access Time-Max:20 ns, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
Product details
Manufactured byHynix
Product typeDRAM's
DescriptionSK Hynix Inc HMT112S6AFR6C-H8 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5, 3.3 V, Access Time-Max:20 ns, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionSK Hynix Inc HMT112S6AFR6C-H8 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5, 3.3 V, Access Time-Max:20 ns, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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