Product details
Manufactured byHynix
Product groupModules
DescriptionSK Hynix Inc HMT112S6AFP6C-G7 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5, 3.3 V, Access Time-Max:20 ns, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionHynix HMT112S6AFP6C-G7 DDR3 Memory, HMT112S6AFP6C-G7 CMS 1GB 204p PC3-8500 CL7 8c 64X16 DDR3-1066 SODIMM RFB, Hynix
DescriptionSK Hynix Inc HMT112S6AFP6C-G7 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5, 3.3 V, Access Time-Max:20 ns, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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