Hynix H5TQ2G83BFR-TEJ overview
H5TQ2G83BFR-TEJ is a DRAM's made by Hynix. SK Hynix Inc H5TQ2G83BFR-TEJ Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:180 ps, Clock Frequency-Max (fCLK):1.066 GHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
Product details
Manufactured byHynix
Product typeDRAM's
DescriptionSK Hynix Inc H5TQ2G83BFR-TEJ Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:180 ps, Clock Frequency-Max (fCLK):1.066 GHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
DescriptionSK Hynix Inc H5TQ2G83BFR-TEJ Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:180 ps, Clock Frequency-Max (fCLK):1.066 GHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
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Hynix
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