Siemens BSM50GAL100D overview
Siemens BSM50GAL100D Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:6.2 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHAN...
Product details
Manufactured bySiemens
Product groupTransistor
DescriptionSiemens BSM50GAL100D Igbt, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:6.2 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Siemens
View Siemens profile
Available from
Sourcing support available
Start a sourcing request