Siemens BSM25GD120D2 overview
Siemens BSM25GD120D2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):35 A, Polarity/Channel Type:N-CH...
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Manufactured bySiemens
Product groupTransistor
DescriptionSiemens BSM25GD120D2 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):35 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:17, Number of Elements:6
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