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BSM10GD100DN1

Siemens ยท Transistor

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Siemens BSM10GD100DN1

Siemens BSM10GD100DN1 overview

Siemens BSM10GD100DN1 Igbt, Collector-Emitter Voltage-Max:1 kV, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuratio...

Manufactured bySiemens
Part number or familyBSM10GD100DN1
Product groupTransistor

Product details

Manufactured bySiemens
Product groupTransistor
DescriptionSiemens BSM10GD100DN1 Igbt, Collector-Emitter Voltage-Max:1 kV, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:17, Number of Elements:6

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Product group Transistor Explore Transistor Explore IGBTs
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