Siemens BSM100GB160D overview
Siemens BSM100GB160D Igbt, Collector-Emitter Voltage-Max:1.6 kV, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configurat...
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Manufactured bySiemens
Product groupTransistor
DescriptionSiemens BSM100GB160D Igbt, Collector-Emitter Voltage-Max:1.6 kV, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:2
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