Siemens CLY10E6327 overview
CLY10E6327 is made by Siemens. Siemens CLY10E6327 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:9 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (ID):2.1 A
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Manufactured bySiemens
DescriptionSiemens CLY10E6327 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:9 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (ID):2.1 A
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