Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BUZ385 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:800 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Siemens
View Siemens profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request