Siemens BUZ325 overview
BUZ325 is made by Siemens. Siemens BUZ325 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12.5 A,Drain Current-Max (ID):12.5 A,Drain-source On Resistance-Max:350 m?
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Manufactured bySiemens
DescriptionSiemens BUZ325 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12.5 A,Drain Current-Max (ID):12.5 A,Drain-source On Resistance-Max:350 m?
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