Siemens BUZ100S overview
BUZ100S is made by Siemens. Siemens BUZ100S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):77 A,Drain-source On Resistance-Max:15 m?
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Manufactured bySiemens
DescriptionSiemens BUZ100S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):77 A,Drain-source On Resistance-Max:15 m?
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