Siemens BTS114AE3045 overview
Siemens BTS114AE3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND TEMPERATURE...
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Manufactured bySiemens
Product typeIC Device
DescriptionSiemens BTS114AE3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR, Number of Terminals:2, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:100 mΩ
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