Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BTS114 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):14 A, Drain Current-Max (ID):14 A, Drain-source On Resistance-Max:100 mΩ
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