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Manufactured bySiemens
Product groupModules
DescriptionSiemens BSS95 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:240 V, Number of Elements:1, Drain Current-Max (Abs) (ID):800 mA, Drain Current-Max (ID):800 mA, Drain-source On Resistance-Max:10 Ω
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Siemens
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Modules
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