Siemens BSP149E-6327 overview
Siemens BSP149E6327 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminal...
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DescriptionSiemens BSP149E6327 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):480 mA,Drain-source On Resistance-Max:3.5 ?
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