Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BSO307N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (ID):4.2 A, Drain-source On Resistance-Max:75 mΩ
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Siemens
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Modules
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