Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BSM652F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:17, DS Breakdown Voltage-Min:500 V, Number of Elements:6, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:350 mΩ
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Modules
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