Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BSM284F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:7, DS Breakdown Voltage-Min:800 V, Number of Elements:2, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:480 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Siemens
View Siemens profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request