Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BSM181 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):36 A,Drain Current-Max (ID):36 A,Drain-source On Resistance-Max:240 m?
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Siemens
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Modules
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