Product details
Manufactured bySiemens
Product groupModules
DescriptionSiemens BSM121AR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN RESISTOR, Number of Terminals:4, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):130 A, Drain-source On Resistance-Max:20 mΩ
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Siemens
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Modules
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