Sensitron Semiconductors MOD2012 overview
Sensitron Semiconductors MOD2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SEPARATE, 4 ELEMENTS WITH BUILT...
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Manufactured bySensitron Semiconductors
Product groupModules
DescriptionSensitron Semiconductors MOD2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:12, DS Breakdown Voltage-Min:200 V, Number of Elements:4, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:180 mΩ
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