Sensitron Semiconductors MOD2010 overview
Sensitron Semiconductors MOD2010 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-I...
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Manufactured bySensitron Semiconductors
Product groupModules
DescriptionSensitron Semiconductors MOD2010 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:12, DS Breakdown Voltage-Min:100 V, Number of Elements:6, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:55 mΩ
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