SANYO Semiconductor Co Ltd ECH8601M overview
SANYO Semiconductor Co Ltd ECH8601M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WI...
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Manufactured bySANYO Semiconductor Co Ltd
Product groupModules
DescriptionSANYO Semiconductor Co Ltd ECH8601M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:24 V, Number of Elements:2, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:30 mΩ
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