Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G0846D-HCH9 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
DescriptionDRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin FBGA
Description (Existing)Samsung K4B2G0846D-HCH9 DDR3 Memory Module | 2Gb Density | 8 Width | 1333 Freq | 9-9-9 Latency CL-tRCD-tRP
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