Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B1G0446E-HCF8 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:150 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192
DescriptionSamsung K4B1G0446E-HCF8 DDR3 Memory Module | 1Gb Density | 4 Width | 1066 Freq | 7-7-7 Latency CL-tRCD-tRP
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