Samsung MR18R082GAN1-CK8 overview
Samsung Semiconductor MR18R082GAN1-CK8 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:...
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Manufactured bySamsung
Product typeAccessory
DescriptionSamsung Semiconductor MR18R082GAN1-CK8 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):800 MHz, Access Mode:BLOCK ORIENTED PROTOCOL
DescriptionSAMSUNG MR18R082GAN1-CK8 256 Mb RDRAM ECC Rambus
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