Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470L2923DV0-CB3 Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionSAMSUNG M470L2923DV0-CB3 M470L2923DV0-CB3
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