Samsung K4S640832D-TC1H overview
Samsung Semiconductor K4S640832D-TC1H Dram, Memory Density:67.1089 Mbit, Memory Width:8, Organization:8MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 ...
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Manufactured bySamsung
Product typeAccessory
DescriptionSamsung Semiconductor K4S640832D-TC1H Dram, Memory Density:67.1089 Mbit, Memory Width:8, Organization:8MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
DescriptionSamsung K4S640832D-TC1H Accessory
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