Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4S281632D-TC1L Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
DescriptionSAMSUNG K4S281632DTC1L K4S281632DTC1L
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| # | Name |
|---|---|
| 1 | K4S281632D-TC1L |