Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSP3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:5 Ω
DescriptionSAMSUNG SSP3N80 SSP3N80
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