Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T2953EZ3-CE6 Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
DescriptionSAMSUNG M470T2953EZ3CE6 M470T2953EZ3CE6
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| # | Name |
|---|---|
| 1 | M470T2953EZ3-CE6 |