Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470L3224DT0-CB0 Dram, Memory Density:2.1475 Gbit, Memory Width:64, Organization:32MX64, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
DescriptionSAMSUNG M470L3224DT0CB0 M470L3224DT0CB0
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| # | Name |
|---|---|
| 1 | M470L3224DT0-CB0 |