Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KM736V747T-10 Sram, Memory Density:4.7186 Mbit, Memory Width:36, Organization:128KX36, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:2.5/3.3, 3.3 V, Access Time-Max:10 ns, Clock Frequency-Max (fCLK):83 MHz
DescriptionSAMSUNG KM736V747T10 KM736V747T10
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| # | Name |
|---|---|
| 1 | KM736V747T-10 |