Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KM718V887T-9 Sram, Memory Density:4.7186 Mbit, Memory Width:18, Organization:256KX18, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):83 MHz
DescriptionSAMSUNG KM718V887T9 KM718V887T9
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| # | Name |
|---|---|
| 1 | KM718V887T-9 |