Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4T1G044QA-ZCCCT Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4T1G044QAZCCCT K4T1G044QAZCCCT
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| # | Name |
|---|---|
| 1 | K4T1G044QA-ZCCCT |