Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H560838E-ZCB3 Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4H560838EZCB3 K4H560838EZCB3
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| # | Name |
|---|---|
| 1 | K4H560838E-ZCB3 |