Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H560838E-GCB0 Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
DescriptionSAMSUNG K4H560838EGCB0 K4H560838EGCB0
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| # | Name |
|---|---|
| 1 | K4H560838E-GCB0 |