Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H560438E-GCB3 Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST
DescriptionSAMSUNG K4H560438EGCB3 K4H560438EGCB3
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| # | Name |
|---|---|
| 1 | K4H560438E-GCB3 |