Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H1G0438M-TCB0 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192
DescriptionSAMSUNG K4H1G0438MTCB0 K4H1G0438MTCB0
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| # | Name |
|---|---|
| 1 | K4H1G0438M-TCB0 |