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KM736FV4011H-6

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Samsung KM736FV4011H-6

Samsung KM736FV4011H-6 overview

KM736FV4011H 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) Samsung Semiconductor KM736FV4011H-6 Sram, Memory Density:4.7186 Mbi...

Manufactured bySamsung
Part number or familyKM736FV4011H-6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionKM736FV4011H 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V)
DescriptionSamsung Semiconductor KM736FV4011H-6 Sram, Memory Density:4.7186 Mbit, Memory Width:36, Organization:128KX36, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:1.5, 3.3 V, Access Time-Max:3 ns

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