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K6T4016V3C-RB10

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Samsung K6T4016V3C-RB10

Samsung K6T4016V3C-RB10 overview

256Kx16 bit Low Power and Low Voltage CMOS Static RAM Samsung Semiconductor K6T4016V3C-RB10 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256K...

Manufactured bySamsung
Part number or familyK6T4016V3C-RB10
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description256Kx16 bit Low Power and Low Voltage CMOS Static RAM
DescriptionSamsung Semiconductor K6T4016V3C-RB10 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:100 ns

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