Product details
Manufactured bySamsung
Product groupModules
DescriptionK6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM
DescriptionSamsung Semiconductor K6T4016U3B-RF10 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3 V, Access Time-Max:100 ns
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request