Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K6R4016V1D-EI10 Integrated Circuit, K6R4016V1D-EI10 SAMSUNG
DescriptionSamsung Semiconductor K6R4016V1D-EI10 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:10 ns
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