Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K6F4016U6E-EF70 Integrated Circuit, SAMSUNG BGA48
DescriptionSamsung Semiconductor K6F4016U6E-EF70 Sram, Memory Density:4.1943 Mbit, Memory Width:16, Organization:256KX16, Supply Voltage-Nom (Vsup):3 V, Power Supplies:3 V, Access Time-Max:70 ns
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request