Samsung SSS5N80 overview
SSS5N80 is made by Samsung. Samsung Semiconductor SSS5N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.7 A,Drain Current-Max (ID):2.7 A,Drain-source On…
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Manufactured bySamsung
DescriptionSamsung Semiconductor SSS5N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.7 A,Drain Current-Max (ID):2.7 A,Drain-source On Resistance-Max:2.5 ?
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