Samsung SSS3N80 overview
Samsung Semiconductor SSS3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS ...
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Manufactured bySamsung
DescriptionSamsung Semiconductor SSS3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.8 A, Drain Current-Max (ID):1.8 A, Drain-source On Resistance-Max:5 Ω
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