Samsung SSP4N70A overview
SSP4N70A is made by Samsung. Samsung Semiconductor SSP4N70A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:700 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max…
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Manufactured bySamsung
DescriptionSamsung Semiconductor SSP4N70A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:700 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:2.5 Ω
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